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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5
BTC4505M3
Features
* High breakdown voltage. (BVCEO =400V) * Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. * Complementary to BTA1759M3 * Pb-free package
Symbol
BTC4505M3
Outline
SOT-89
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 600 150 -55~+150 Unit V V V mA mW C C
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 82 Typ. 0.1 20 7 Max. 10 10 0.5 1.5 270 Unit V V V A A V V MHz pF
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 2/5
Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=400V, IE=0 VEB=6V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Ordering Information
Device BTC4505M3 Package SOT-89 (Pb-free ) Shipping 1000 pcs / Tape & Reel
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 HFE@VCE=10V Current Gain---HFE
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 3/5
Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV) VCESAT@IC=10IB 1000
100
100
10 0.1 1 10 100 1000 Collector Current ---IC(mA)
10 0.1 1 10 100 1000 Collector Current ---IC(mA)
Saturation Voltage vs Collector Current 10000 Saturation Voltage-(mV)
Power Dissipation---PD(mW) 700 600
Power Derating Curve
VBESAT@IC=10IB
500 400 300 200 100 0
1000
100 0.1 1 10 100 1000 Collector Current--- IC(mA)
0
50
100
150
200
Ambient Temperature---TA( )
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 4/5
Carrier Tape Dimension
BTC4505M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 5/5
Marking:
1
2
C
3
H
3D
B
D
E F G
I
Style: Pin 1. Base 2. Collector 3. Emitter 3-Lead SOT-89 Plastic Surface Mounted Package *: Typical
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201
Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51
DIM F G H I
Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161
Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505M3
CYStek Product Specification

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